A 1.8ppm/°C Low Temperature Coefficient Curvature Compensated Bandgap for the Low Voltage Application

2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013(2013)

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摘要
A new CMOS curvature compensated bandgap reference circuit which uses two different types of material to realize its resistors in an improved structure is presented. Implemented in a 0.18 mu m technology, it achieves performance of a temperature coefficient of 1.8ppm/degrees C over 0 similar to 100 degrees C, a line regulation of 0.017% N over the range 1.2 similar to 3V and a power supply rejection ratio of 82dB@1Hz. It can offer a reference voltage of 1.1V but occupy an area of only 0.049 mm(2).
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关键词
Curvature compensated,bandgap,P-diffusion resistor,low power
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