A 1.8ppm/°C Low Temperature Coefficient Curvature Compensated Bandgap for the Low Voltage Application
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013.
SCOPUS EI WOS
A new CMOS curvature compensated bandgap reference circuit which uses two different types of material to realize its resistors in an improved structure is presented. Implemented in a 0.18 mu m technology, it achieves performance of a temperature coefficient of 1.8ppm/degrees C over 0 similar to 100 degrees C, a line regulation of 0.017% N...More
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