An investigation of passivation properties of SiNx-Si interface by an MIS model

This paper presents a new way to study passivation mechanism of SiNx-Si interface using capacitance-voltage method. Fixed charge density (N-f) near dielectric/Si interface, which is closely related to field effect passivation, and interface trap density (D-it) at dielectric/Si interface, which is closely related to chemical passivation, can be obtained directly from experimental CV characteristics. The passivation properties of SiNx-Si can be studied and optimized by the MIS model.