Channel Hot-Carrier degradation characteristics and trap activities of high-k/metal gate nMOSFETs

Weichun Luo,Hong Yang,Wenwu Wang,Hao Xu,Shangqing Ren,Bo Tang,Zhaoyun Tang,Jing Xu,Jiang Yan,Chao Zhao,Dapeng Chen,Tianchun Ye

Physical and Failure Analysis of Integrated Circuits（2013）

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摘要

In this paper, the Hot-Carrier (HC) degradation characteristics and mechanisms of nMOSFETs with high-k/metal gate (HK/MG) structure are systematically investigated. The Idsat shift under different Vd states obeys power-law of Vg stress time, and the exponent of Vg stress time shifts from 0.5~0.7 at low stress to 0.2~0.3 at high stress, which is believed to be induced by different trap activities. There are two transitions in the curve of time to fail (TTF) and Vg stress, the 1st valley point is resulted from impact ionization, and the 2nd transition is attributed to the dominant roles exchange of the interface trap (Nit) and bulk trap (Not) in dielectric in degradation.

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关键词

chc degradation,high-k dielectric thin films,voltage states,time-to-fail curve,interface trap,hot carriers,interface states,first valley point,hk/mg,ttf curve,nit,trap activities,bulk trap,not,current shift,impact ionisation,impact ionization,second transition,voltage stress time,mosfet,channel hot-carrier degradation characteristics,hk-mg structure,high-k-metal gate nmosfet mechanism,integrated circuits,failure analysis,degradation,threshold voltage,stress

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