Impact of V/III ratio on GaN growth by HVPE

Huiqiang Yu,Lanying Chen,Rong Zhang,Xiangqian Xiu,Zili Xie,Yuda Ye,Shulin Gu,Bo Shen,Yi Shi,Youdou Zheng

13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004.（2004）

引用 0|浏览9

暂无评分

摘要

Thick GaN films grown with different V/III ratio on sapphire by hydride vapour phase epitaxy have been investigated. The V/III ratio is changed from 240 to 30. All the GaN films, which are n type, show only (0002) oriented peak and have the band emission with no yellow luminescence bands. When V/III ratio is 30, the full width at half maximum of (0002) X-ray rocking curve is the smallest, line-width of the band edge emission is narrow, the surface morphology shows step-flow growth and the growth rate is the highest.

查看译文

关键词

III-V semiconductors,X-ray spectra,chemical vapour deposition,gallium compounds,photoluminescence,semiconductor epitaxial layers,semiconductor growth,surface morphology,vapour phase epitaxial growth,wide band gap semiconductors,Al2O3,GaN,GaN films,GaN growth,HVPE,V/III ratio,X-ray rocking curve,band edge emission,hydride vapour phase epitaxy,luminescence bands,step-flow growth,surface morphology

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要