A low-cost, forming-free WOx ReRAM using novel self-aligned photo-induced oxidation

Technical Digest - International Electron Devices Meeting, IEDM, pp. 20.7.1-20.7.4, 2013.

Cited by: 2|Bibtex|Views23|DOI:https://doi.org/10.1109/IEDM.2013.6724672
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Abstract:

A novel CMOS compatible photo oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong oxidation capability to form CMOS compatible WOx. The oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique ...More

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