The Shunt Influence Of Al-P Plus Emitter On Voc Characteristics And Its Optimization For Interdigitated Back Contact Solar Cells

In the case of screen-printed aluminum alloyed p(+) emitter (Al-p(+)) Interdigitated Back Contact (IBC) solar cells, the shunt path induced by non-uniformity and discontinuity of the Al-p(+) emitter has been minimized by exact control of firing condition. PC2D simulation results show that reduction and elimination of shunt path on Al-p(+) emitter can significantly enhance the photovoltaic properties especially the open-circuit voltage (V-oc). We use a multi-diode model to establish the relation between the Voc and the effective shunt resistance of the cell.