Analytical static and small signal models for high electron mobility transistor
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors(1995)
摘要
Based on a new two piecewise nonlinear model for the electron concentration in two-dimensional electron gas layer, the analytical static and small signal models for high electron mobility transistor were developed. The accurate solutions for AC wave equations were obtained by Bessel function method. The comparison of DC characteristics and high frequency parameters with the experimental data showed that the theoretical analysis matches the experiment very well.
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