Study on reactive ion etching of Si with SF6+N2 and its profile

The experiments on the reactive ion etching of Si by using SF6+N2 gas as etchant and its etching profile were reported. The relations among the etching rate of Si, gas composition, radio frequency power density and loading effect of Si were studied. A processing technique was obtained by parameter optimization for vertical sidewall etching. The etching has been applied to the fabrication of micromotor and holographic grating.