Kinetics Of Thermal Annealing In Strained Ultrathin Si/Ge Superlattices On Vicinal Si(100) Studied By Raman Scattering
JOURNAL OF APPLIED PHYSICS(1996)
摘要
We report the experimental studies of in situ kinetic thermal annealing process by Raman scattering obtained from very short period Si/Ge superlattices grown on two types of vicinal Si(100) substrates. The experimental results show that the samples grown on double-stepped vicinal Si(100) substrates have well-defined in-plane strain in the epilayers and rather perfect interfaces. The samples grown on single-stepped vicinal Si(100), on the other hand, appear to have strain-relaxed and imperfect interfaces. The former is also thermodynamically mon stable than the latter, and a suggested explanation is given. (C) 1996 American Institute of Physics.
更多查看译文
关键词
kinetics,thermal annealing,raman spectra,raman scattering,superlattices,thermodynamics
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要