SRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT

LU ER-DONG, ZHANG FA-PEI, YU XIAO-JIANG, XU SHI-HONG, XU FA-QIANG, PAN HAI-BIN, HAN ZHENG-FU, XU PENG-SHOU, ZHANG XIN-YI

Wuli Xuebao/Acta Physica Sinica（1997）

引用 0|浏览4

暂无评分

摘要

In this paper, CH3CSNH2 passivated GaAs(100) surfaces in different conditions such as in alkali and acid solution were investigated by SRPES and PL. SRPES reveals that sulfur bonds both Ga and As on GaAs surfaces. Improvements of PL intensities reveal the reduction of surface combination velocity, resulting in the reduction of surface defect states due to the formation of sulfur passivation films.

查看译文

关键词

null

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要