900 MHz 7.4 W SiGe heterojunction bipolar transistor

Jinshu Zhang,Hongyong Yong Jia,Peihsin Hsin Tsien,TaiChin Lo,Zengmin Yang,Jie Huang, Yihui Wang,Luoguang Huang,Chunguang Liang,Mingxian X. Feng,Qiyuan Y. Lin

Shatin（1999）

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摘要

The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si process. The current gain of the SiGe HBT is 70, and the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V respectively. In common emitter configuration and class C operation, the SiGe HBT with continuous wave output power of 7.4 W and power added efficiency of 53% and power gain of 8.7 dB was obtained at the frequency of 900 MHz. Hence, the emitter current linear density of the SiGe HBT with emitter region width of 6 μm is 1.7 A/cm

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关键词

breakdown voltages,emitter region width,sige,semiconductor materials,emitter current linear density,power added efficiency,sige heterojunction bipolar transistor,hbt,common emitter configuration,continuous wave output power,heterojunction bipolar transistors,semiconductor device breakdown,microwave power transistors,class c operation,7.4 w,microwave power applications,current gain,power gain,ge-si alloys,simple planar process,emitter junction,collector junction,900 mhz,continuous wave,heterojunction bipolar transistor,fabrication,power generation,voltage,breakdown voltage,frequency

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