Study of the GaAs, AlGaAs MBE growth dynamics

The intensity oscillations in the various beams in RHEED pattern were observed during MBE growth of GaAs and AlGaAs. The two-dimensional layer-by-layer mode was used to analyze the experiment results and (00),(01) beams intensity oscillations were attributed to the periodic variations of the surface roughness. The existence of the various fractional-order beams indicated that the reconstructed surface existed on the GaAs (001) substrate surface during growth in the present growing conditions, their intensity oscillations were attributed to the reconstruction periodic variations on the two-dimensional island surface.