Investigation of crystalline mechanism of beta-SiC thin films by Cat-CVD

The beta-SiC thin films were grown on Si(100) substrates by Cat-CVD. The effect of deposition gas pressures was systematically studied. The Fourier Transform Infrared Spectroscopy (FTIR) spectrum of the samples indicated that crystallized degree of the samples led in appearenee of a minimum. However, the deposition rate was increased with increasing of gas pressures basically. X-ray diffraction (XRD) pattern also testified the formation of beta-SiC in the thin films. Moreover, according to the formula of Debeye-Scherrer, the crystalline size for these thin films was estimated in nanometer-scale.