Selected Topics On Hfo2 Gate Dielectrics For Future Ulsi Cmos Devices

Based on our recent investigation on HfO2 high-k gate dielectrics, we review the Hf based gate dielectric in the future ULSI CMOS devices in the following aspects : How long HFO2 call be used satisfactorily. assessed front the gate tunneling and scalability; how thin EOT can be grown technologically assessed by interfacial layer thickness; and how high operating voltage call be employed for 10 years reliable operation, assessed by charge trapping and threshold voltage shift.