A Novel 4.5$\hbox{f}^{2}$ Capacitorless Semiconductor Memory Device
IEEE electron device letters(2008)
摘要
This letter proposes a novel 4.5F2 capacitorless dynamic random access memory cell with a floating gate (FG) connected to drain via a gated p-n junction diode. The FG in the proposed memory device is for charge storage and can electrically be charged or discharged by current flowing through a gated p-n junction diode.
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关键词
Capacitorless dynamic random access memory (DRAM),floating-body cell,MOSFET
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