Design Of A Novel Capacitorless Dram Cell With Enhanced Retention Performance
2009 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (WMED)(2009)
摘要
A novel capacitorless DRAM cell with enhanced retention performance is investigated. The write / read mechanisms, speed, retention performance are studied with numerical simulations. Further, the manufacturing method of this device is briefly discussed.
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关键词
dynamic random access memory,floating gate,floating junction,capacitorless,retention
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