A Ga2o Center Dot 11al(2)O(3) Nanonet Prepared By Interfacial Reaction Growth Approach And Its Application In Fabricating Gan Nanowires

A Ga2O.11Al(2)O(3) nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H-2 atmosphere which further reacted with Al2O3 at 730 degrees C to form Ga2O center dot 11Al(2)O(3) at the interfaces of a porous anodic aluminum oxide (AAO) template. The prepared Ga2O center dot 11Al(2)O(3) nanonet then served as a Ga2O-stablizing reservoir to fabricate single crystal GaN nanowires. The residual Ga2O3 powder at the surface of the produced Ga2O center dot 11Al(2)O(3) nanonet and the metallic Ga or Ga2O from the Ga2O center dot 11Al(2)O(3) decomposition reacted with ammonia to yield GaN nanowires at 780 degrees C. The reaction mechanisms were investigated.