Enhanced electroluminescence from nc-Si/SiO2 pillar arrays using nanosphere lithography

Zhongyuan Ma,GuangYuan Liu,Guoyin Xia,MinYi Yan,Xiaofan Jiang,Tao Ling,Ling Xu,Hengping Dong,XinFan Huang,Kunji Chen,Wei Li,Duan Feng

Group IV Photonics（2010）

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摘要

Intensive electroluminescence could be observed from nc-Si/SiO2 pillars. The electroluminescence intensity is increased by 30 times of magnitude compared to that of nc-Si/SiO2 multilayers. The enhancement of EL can be attributed to the improved extraction efficiency of emission light and the high carrier-injection efficiency.

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关键词

electroluminescence,nanofabrication,nanolithography,nanophotonics,optical arrays,optical fabrication,optical multilayers,silicon,silicon compounds,Si-SiO2,electroluminescence intensity,high carrier-injection efficiency,light emission,multilayers,nanosphere lithography,nc-Si-SiO2 pillar arrays

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