Electrically pumped waveguide lasing from ZnO nanowires

Ultraviolet semiconductor lasers are widely used for applications in photonics, information storage, biology and medical therapeutics. Although the performance of gallium nitride ultraviolet lasers has improved significantly over the past decade, demand for lower costs, higher powers and shorter wavelengths has motivated interest in zinc oxide (ZnO), which has a wide direct bandgap and a large exciton binding energy 1 , 2 , 3 , 4 , 5 , 6 . ZnO-based random lasing has been demonstrated with both optical and electrical pumping 7 , 8 , 9 , 10 , but random lasers suffer from reduced output powers, unstable emission spectra and beam divergence. Here, we demonstrate electrically pumped Fabry–Perot type waveguide lasing from laser diodes that consist of Sb-doped p-type ZnO nanowires and n-type ZnO thin films. The diodes exhibit highly stable lasing at room temperature, and can be modelled with finite-difference time-domain methods.