Schottky barrier light emitting diode in standard CMOS technology

Beiju Huang,Wei Wang,Zan Dong,Zanyun Zhang

IEEE International Conference on Group IV Photonics GFP（2011）

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摘要

Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from 673nm to 785nm.

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关键词

Schottky diodes,electroluminescence,light emitting diodes,Schottky barrier light emitting diode,stable electro-luminescent emission,standard CMOS technology,wavelength 673 nm to 785 nm,Complementary Metal-Oxide-Semiconductor (CMOS),Schottky Barrier Diode (SBD),Silicon Photonics,Silicon based light emitting device (Si-LED),

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