A Two-Stage Degradation Model of p-Channel Low-Temperature Poly-Si Thin-Film Transistors Under Positive Bias Temperature Stress
Electron Devices, IEEE Transactions（2011）
摘要
Positive-bias temperature-stress-induced degradation in p-channel poly-Si thin-film transistors is investigated. Two-stage degradation behavior is observed. In the first-stage degradation, on-state current (ION) initially increases associated with a positive threshold voltage (Vth) shift and is then followed by a gradual ION decrease. In the second stage, Vth shifts to the negative, and ION significantly degrades. A comprehensive physical model is proposed to clarify the two-stage degradation behavior. The first-stage degradation is attributed to electron trapping and detrapping, whereas the second-stage degradation is dominated by positive charge generation.
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关键词
degradation,electron trapping,negative-bias temperature instability (nbti) positive-bias temperature stress,p-channel low-temperature poly-si thin-film transistor,two-stage degradation model,comprehensive physical model,poly-si,positive threshold voltage shift,on-state current,positive-bias temperature-stress-induced degradation,silicon,thin-film transistors (tfts),si,positive charge generation,elemental semiconductors,electron detrapping,thin film transistors,logic gate,negative bias temperature instability,physical model,stress,logic gates,threshold voltage,thin film transistor
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