Two-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al2O 3/p-Si diode
IEEE Transactions on Electron Devices(2011)
摘要
A write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich Al2O3 /p-type Si diode. A large increase in the reverse current of the diode could be achieved with a negative charging voltage, e.g., charging at -25 V for 1 ms results in a current increase by about four orders. Memory states of the WORM device could ...
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关键词
Charge carrier processes,Writing,Voltage measurement,Grippers,Aluminum oxide,Current measurement,Silicon
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