Structural, Dielectric And Ferroelectric Properties Of Ti-Modified 0.72bifeo(3)-0.28pbtio(3) Multiferroic Thin Films Prepared By Pulsed Laser Deposition

Ti-modified 0.72BiFeO(3)-0.28PbTiO(3) thin films were prepared on Pt/Ti/SiO2/Si substrates by pulsed laser deposition under different oxygen pressures from 2 Pa to 15 Pa. The microstructures and electrical properties were investigated. Tetragonal ( 001) preferential orientation was observed in all films under different oxygen atmosphere pressures. The electrical properties of the thin films have been investigated for various deposition conditions. The dielectric constant and double remanent polarization were found to be 550 and 80 mu C/cm(2), respectively, for the thin film deposited at an oxygen atmosphere of 10 Pa and a substrate temperature of 680 degrees C.