Annealing-induced changes in electrical characteristics of Al/Al-rich Al2O3/p-Si Diodes

Al-rich thin films are synthesized by radio-frequency magnetron sputtering, followed by thermal annealing at 500°C for different durations to form Al/Al-rich diodes. The annealing causes reactions at the Al-rich interface, leading to an increase in Al concentration in the interface region. As a result, the current conduction of the diode is significantly enhanced, which results in anomalous capaci...