Leakage current and breakdown of GaN-on-Silicon vertical structures

D Cornigli,F Monti,Susanna Reggiani,Elena Gnani,Antonio Gnudi,Giorgio Baccarani

Ultimate Integration Silicon（2015）

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摘要

A TCAD-based approach has been used to investigate the leakage current and breakdown regime of vertical GaN/AlGaN/Si structures at different ambient temperatures. A good agreement with experimental data has been obtained by implementing both trap-assisted and Poole-Frenkel conduction mechanisms into the buffer layers. The latter mechanisms have been proven to anticipate the onset of breakdown at high temperatures.

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关键词

iii-v semiconductors,aluminium,elemental semiconductors,gallium compounds,leakage currents,semiconductor devices,silicon,technology cad (electronics),wide band gap semiconductors,gan-algan,leakage current,poole-frenkel conduction mechanism,si,tcad-based approach,ambient temperatures,breakdown regime,buffer layers,gallium nitride-on-silicon vertical structures,trap-assisted conduction mechanism

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