Steep Slope and Near Non-Hysteresis of FETs with Antiferroelectric-Like HfZrO for Low-Power Electronics

The antiferroelectricity in HfZrO2 (HZO) annealed at 600 degrees C with an abrupt turn ON of FET characteristics with SSmin = 23 mV/dec and SSavg = 50 mV/dec over 4 decades of I-DS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.