P-type trigate nano wires: Impact of nano wire thickness and Si0.7Ge0.3 source-drain epitaxy

Gaben, L.,Barraud, S.,Samson, M.-P.,Hartmann, J.-M.

Ultimate Integration Silicon（2015）

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摘要

The impact of nanowire (NW) height and Si0.7Ge0.3:B source-drain (S/D) on the performance of p-type trigate NW is presented. We show that an increase in Si NW height from 14.5nm to 24nm generates up to +30% enhancement in hole effective mobility for a 13nm NW width. Effectiveness of Sio.7Geo.3:B S/D is then discussed for a wide range of NW width (13nm<;W<;218nm) and height (11nm<;HNw<;24nm). We also highlight short-channel performance of trigate NW with Si0.7Ge0.3:B S/D: +86% Ion improvement is observed for HNw=11nm against only +58% for HNw=24nm.

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关键词

Ge-Si alloys,boron,nanowires,transistors,S-D epitaxy,Si0.7Ge0.3:B,p-type trigate NW,p-type trigate nanowire transistor,short-channel performance,size 11 nm,size 13 nm,size 14.5 nm to 24 nm,source-drain epitaxy,Channel Strain,Electrostatics,Fin-FET,Hole Mobility,MOSFET,Nanowire,SiGe Some Brain,Silicon,Trigate

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