A New String Decoding Scheme for Enhancing Array Block Efficiency of Vertical Gate Type (VG-Type) 3-D NAND

Electron Device Letters, IEEE  , Volume 36, Issue 4, 2015, Pages 330-332.

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Abstract:

The 3-D NAND flash is a path to achieve the highest density and the lowest cost of solid-state nonvolatile memory. Vertical gate type 3-D NAND, one of the 3-D NAND flash memories, has the smallest cell footprint (4F2). We had previously proposed a split page design for selecting NAND strings that incurs an array overhead. In this letter, ...More

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