New insight on negative bias temperature instability degradation with drain bias of 28 nm High-K Metal Gate p-MOSFET devices.
Microelectronics Reliability(2014)
摘要
•NBTI asymmetry between forward and reverse mode under non-uniform stress.•The phenomena attribute to local self-heating enhanced NBTI by ballistic phonon.•We propose a semi-empirical analytical model fitting well with experimental data.
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关键词
Drain bias,Forward and reverse asymmetry,Negative bias temperature instability,Non-uniform stress
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