A Low Spur Cmos Phase-Locked Loop With Wide Tuning Range For Cmos Image Sensor

2013 IEEE 10TH INTERNATIONAL CONFERENCE ON ASIC (ASICON)(2013)

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摘要
A CMOS phase-locked loop (PLL) with low reference spur and wide tuning range implemented in 0.18 mu m CMOS technology is presented in this paper. The design is based on the programmable integer-N PLL structure and the center frequency is around 480MHz for CMOS Image Sensor applications. A pseudo-differential current-starved multi-band ring oscillator is proposed to widen the tuning range. Several circuit techniques are used to minimize the phase frequency detector (PFD) UP/DN timing mismatch and charge pump (CP) current glitches, which reduce the reference spur. Implemented in the 0.18 m CMOS technology, the simulation results show that the -52.6dBc reference spur and the 94.4% tuning range (covering from 30MHz to 1050MHz) can be achieved.
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关键词
CMOS image sensors,charge pump circuits,phase locked loops,CMOS PLL,CMOS image sensor,CMOS technology,PFD,UP/DN timing mismatch,charge pump current glitches,frequency 30 MHz to 1050 MHz,low spur CMOS phase-locked loop,phase frequency detector,programmable integer-N PLL structure,pseudodifferential current-starved multiband ring oscillator,size 0.18 mum,wide tuning range,
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