Ellipsometry for cSiGe metrology
Advanced Semiconductor Manufacturing Conference(2014)
摘要
In this paper we report the effectiveness of optical ellipsometry in measuring thickness and Germanium % of channel SiGe on SOI substrate used in advanced node high performance semiconductor devices.
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关键词
ge-si alloys,ellipsometry,semiconductor devices,silicon-on-insulator,thickness measurement,soi substrate,sige,advanced node high performance semiconductor devices,optical ellipsometry,ge concentration,thickness,csige,metrology,silicon on insulator
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