A 533pW NEP 31×31 pixel THz image sensor based on in-pixel demodulation

Boukhayma, A., Rostaing, J.-P., Mollard, A.,Guellec, F.

European Solid State Circuits Conference（2014）

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摘要

A THz 31×31 pixel, 100 fps image sensor integrated in a 130 nm CMOS process is presented. Taking advantage of the possibility to modulate the active source that lights the scene, a significant improvement in sensitivity and NEP is achieved by shifting the modulated THz radiation, by means of an antenna/MOSFET, then filtering the signal band using an in-pixel 16-paths passive SC-filter combined with a CT Gm-C filter resulting in a high Q factor of 100. This THz imager features a measured NEP of 533 pW at 270 GHz and 732 pW at 600 GHz respectively, and a sensitive readout chain with an input referred noise of 0.2 μVRMS.

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关键词

CMOS image sensors,MOSFET,demodulation,integrated circuit noise,millimetre wave antennas,millimetre wave detectors,millimetre wave field effect transistors,millimetre wave filters,millimetre wave imaging,millimetre wave integrated circuits,modulation,passive filters,submillimetre wave antennas,submillimetre wave detectors,submillimetre wave filters,submillimetre wave imaging,submillimetre wave integrated circuits,switched capacitor filters,terahertz wave detectors,terahertz wave imaging,CT Gm-C filter,NEP,THz image sensor,THz radiation modulation,active source modulation,antenna/MOSFET,frequency 270 GHz,frequency 600 GHz,in-pixel 16-paths passive SC-filter,in-pixel demodulation,power 533 pW,power 732 pW,signal band filtering,size 130 nm,voltage 0.2 muV,CMOS,Gm-C filter,N-paths filter,THz,camera,high selective filtering,image sensor,low noise

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