A high density Twin-Gate OTP cell in pure 28nm CMOS process

Woan Yun Hsiao,Chin Yu Mei,Wen Chao Shen,Tzong Sheng Chang,Y D Chih,Yachin King,Chrong Jung Lin

VLSI Technology, Systems and Application（2014）

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摘要

A high density high-k gate dielectric breakdown OTP cell with a self-aligned twin-gate isolation in pure 28nm HKMG process is demonstrated. With a merged spacer isolation formed by two tiny metal gates, the OTP cells can be well isolated with an ultra small cell size of 0.0441μm2 in pure 28nm CMOS logic process. The Twin-Gate OTP memory adopts low voltage high-k dielectric breakdown mechanism to obtain 104 times of On/Off ratio by a low program voltage of 4V in 20μs. A tiny and excellent Twin-Gate isolation with wide program and temperature margins has been successfully achieved in this OTP cell. Superior disturbs immunity and data retention further support the new logic OTP cell to be a promising solution in advanced logic NVM applications.

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关键词

cmos logic circuits,electric breakdown,high-k dielectric thin films,low-power electronics,cmos logic process,cmos process,hkmg process,advanced logic nvm applications,data retention,high density high-k gate dielectric breakdown otp cell,high density twin-gate otp cell,logic otp cell,low voltage high-k dielectric breakdown mechanism,on-off ratio,one-time programmable memories,self-aligned twin-gate isolation,size 28 nm,spacer isolation,temperature margins,time 20 mus,tiny metal gates,twin-gate otp memory,twin-gate isolation,voltage 4 v,low power electronics,cmos technology,stress,reliability,cmos integrated circuits,logic gates

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