Adjustable voltage dependent switching characteristics of PRAM for low voltage programming of multi-level resistances

Non-Volatile Memory Technology Symposium, 2014, Pages 1-3.

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Abstract:

Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on which a dual-pulse programming method i...More

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