Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy Ion Irradiation

Lee, D.S.,Wirthlin, M.,Swift, G.,Le, A.C.

Radiation Effects Data Workshop（2014）

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摘要

This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study also describes an unconventional single event latch-up signature observed during testing.

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关键词

SRAM chips,field programmable gate arrays,flip-flops,radiation hardening (electronics),BlockRAM memory,Xilinx Kintex-7 FPGA,Xilinx Kintex-7 field-programmable gate array,configuration SRAM cells,heavy ion irradiation,single-event effect characterization,single-event response,singleevent latch-up signature,size 28 nm,user-accessible flip-flop cells

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