Model Development for Monolithically-Integrated E/D-Mode Millimeter-Wave InAlN/AlN/GaN HEMTs

Jun Ren,Patrick Fay,Paul Saunier,Xiang Gao,Huaquen Tserng,Manyam Pilla,Tsomin Chou,E A Beam,A A Ketterson,Shuoqi Chen,Huili Grace Xing,Bo Song

Compound Semiconductor Integrated Circuit Symposium（2014）

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摘要

Device models to support circuit design efforts using monolithically-integrated enhancement- and depletion-mode high-speed InAlN/AlN/GaN HEMTs are reported. Physically- motivated modifications to the conventional empirical compact models have been included to enhance model accuracy over bias and temperature. The models have been extracted from DC through 110 GHz at baseplate temperatures from 25 °C through 100 °C; good agreement is obtained between measurement results and the extracted model.

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关键词

iii-v semiconductors,aluminium compounds,gallium compounds,high electron mobility transistors,indium compounds,millimetre wave transistors,semiconductor device models,wide band gap semiconductors,inaln-aln-gan,circuit design,depletion-mode,empirical compact models,enhancement-mode,frequency 110 ghz,high-speed inaln-aln-gan hemt,millimeter wave hemt,monolithically-integrated e-d-mode hemt,physically motivated modifications

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