An 8-way power-combining E-band amplifier in a SiGe HBT technology

O&#x;jefors, E.,Stoij, C., Heinemann, B., Ru&#x;cker, H.

European Microwave Integrated Circuit Conference（2014）

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摘要

An E-band power amplifier is demonstrated in an evaluation version of a fT/fmax 300-GHz/450-GHz SiGe:C BiCMOS technology. Eight-way power combining of the outputs of transformer-matched differential-cascode unit cells is used in the final stage of the amplifier. A breakout of the final stage yields a measured small-signal gain of 14 dB at 80 GHz with a 16-GHz bandwidth, whereas a version of the amplifier with an integrated 4-way power-combined pre-driver provides 28 dB gain. In the 71-76-GHz sub-band, a saturated output power of 22 dBm with an output 1-dB compression point of 20 dBm is measured, while 19 dBm output power and a 17-dBm compression point is obtained in the 81-86-GHz band. The current consumption at a 3.3-V supply voltage is 330 mA for the output stage and 500 mA for the amplifier with an integrated pre-driver.

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关键词

BiCMOS integrated circuits,Ge-Si alloys,amplifiers,bipolar MIMIC,field effect MIMIC,heterojunction bipolar transistors,millimetre wave amplifiers,submillimetre wave amplifiers,BiCMOS technology,HBT technology,SiGe:C,bandwidth 16 GHz,frequency 300 GHz,frequency 450 GHz,frequency 71 GHz to 76 GHz,frequency 80 GHz,frequency 81 GHz to 86 GHz,gain 14 dB,gain 28 dB,power combining E-band amplifier,Millimeter wave integrated circuits,heterojunction bipolar transistors,power amplifiers,silicon

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