Defect reduction by nitrogen purge of wafer carriers

Raymond Van Roijen,Pratik Joshi,Javier Ayala,Dane Bailey,S Conti, W Brennan, P Findeis,Michael Steigerwalt

Advanced Semiconductor Manufacturing Conference（2014）

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摘要

Nitrogen purge of wafer carriers is driving defect density reduction at critical process steps. We discuss the mechanism of defect creation and how nitrogen purge improves defect density. We report on experimental split data from in line inspection and the impact at electrical test. The effect on volume manufacturing is demonstrated.

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关键词

sige,integrated circuit manufacture,electrical test,semiconductor materials,inspection,contamination,semiconductor processing,silicide formation process,epitaxy,critical process,in line inspection,ge-si alloys,semiconductor epitaxial layers,defect density reduction,wafer carriers,semiconductor device manufacture,volume manufacturing,semiconductor wafer,gate formation,nitrogen purge

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