Hydrothermal growth of ZnO nanotubes on InGaP/GaAs/Ge solar cells

Semiconductor Electronics(2014)

引用 0|浏览11
暂无评分
摘要
A new design where ZnO nanotubes were grown on the antireflection (AR) layer coated on triple-junction (T-J) solar cell devices to enhance the light conversion efficiency. Compared to the bare T-J solar cells (without an AR layer), the performance of Si3N4 AR coated solar cell showed improvement. The sample with a layer of ZnO nanotubes grown in top of AR layer showed the lowest light reflection compared with the bare and solely AR coated T-J solar cell especially in the spectrum range of 350-500 nm. The use of ZnO nanotubes have increased the conversion efficiency by 4.9% compared with the conventional T-J solar cell. While the Si3N4 AR coated sample only increased the conversion efficiency by 3.2%. This result is quite encouraging as further refinement and variation in the experiment procedures could possibly bring more exciting performance in the future.
更多
查看译文
关键词
iii-v semiconductors,antireflection coatings,elemental semiconductors,semiconductor nanotubes,solar cells,zinc compounds,antireflection layer,gallium arsenide solar cells,germanium solar cells,hydrothermal growth,indium gallium phosphide solar cells,light conversion efficiency enhancement,solely ar coated t-j solar cell,triple-junction solar cell devices,zinc oxide nanotubes,hydrothermal,triple-junctions (t-j) solar cell,zno nanotube
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要