Development of ultrahigh voltage SiC power devices
Power Electronics Conference（2014）
摘要
Ultrahigh voltage SiC devices and their package technology were investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV level p-channel IGBT and 16kV level n-channel IGBT with a low differential specific on-resistance (Rdiff,on). Moreover, the results reveal that the nano-tech resin, improved resin and Si3N4 DBC substrate are the best materials for package at high temperature and ultrahigh voltage.
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关键词
insulated gate bipolar transistors,p-i-n diodes,power semiconductor diodes,semiconductor device packaging,silicon compounds,wide band gap semiconductors,dbc substrate,pin diode,si3n4,sic,differential specific on-resistance,n-channel igbt,nano-tech resin,p-channel igbt,package technology,ultrahigh voltage sic power device,voltage 13 kv,voltage 15 kv,voltage 16 kv,pin,ceramics dbc substrate,n-igbt,p-igbt,resin,ultrahigh voltage,nickel,nitrogen,logic gates
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