Integrating 3D PIN germanium detectors with high-k ALD fabricated slot waveguides
Ultimate Integration Silicon（2014）
摘要
A novel device technology for photonics integrated circuits (PICs) is presented. In this work germanium PIN photodetectors are embedded in back-end deposited high-k slot waveguides. The waveguides are fabricated using chemical vapor deposited amorphous silicon and atomic layer deposition of Al2O3 thin films. The germanium PIN stack is selectively grown on a bulk silicon substrate. The detectors are butt coupled to the slot waveguides. Using our selective germanium growth and interconnect technology we study a 3D multilayer photonic integration for CMOS back-end of the line (BEOL) process. Finally we demonstrate the fabrication of a photonic chip deploying this technology platform.
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关键词
cmos integrated circuits,atomic layer deposition,chemical vapour deposition,elemental semiconductors,germanium,integrated circuit interconnections,integrated circuit manufacture,integrated optics,integrated optoelectronics,optical waveguides,photodetectors,semiconductor thin films,3d pin germanium photodetector,3d multilayer photonic integration,beol process,cmos back-end of the line process,ge,pic,si,back-end deposited high-k slot waveguide,chemical vapor deposited amorphous silicon,germanium pin stack,high-k ald fabricated slot waveguide,interconnect technology,photonic chip fabrication,photonics integrated circuit,thin film,cmos technology,germanium photodetectors,optical interconnects,photonics integrated circuits(pic),silicon photonics,slot waveguides,photonics,silicon,detectors
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