S4-P8: Applications for epitaxial lift-off of III-V materials

Christopher Stender, C Youtsey, F Tuminello, M L Osowski, J Adams, V C Elarde,Hiroshi Miyamoto, A A Wibowo,G Hillier,Rao Tatavarti,N Pan

Lester Eastman Conference High Performance Devices（2014）

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摘要

Epitaxial lift-off (ELO) is a disruptive technology that can enable substantial performance enhancement and cost reduction for epitaxially grown III-V devices [1],[2],[3],[4]. MicroLink Devices, Inc (MLD) is a recognized technological leader in the field of compound semiconductor growth and high efficiency solar cell manufacturing. ELO is a process that involves selectively etching a “release” layer to detach the epitaxially grown functional III-V material from the substrate on which it is grown. The ELO process can be used on a variety of device architectures from solar cells to heterojunction bipolar transistors (HBTs) and light emitting diodes (LEDs).

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关键词

iii-v semiconductors,etching,heterojunction bipolar transistors,light emitting diodes,semiconductor epitaxial layers,solar cells,iii-v materials,microlink devices,inc,epitaxial lift-off,release layer,epitaxial lift-off (elo),heterojunction bipolar transitor (hbt) flexible,light emitting diode (led),photovoltaic,solar,cost reduction,high-efficiency,light-weight,detectors,gallium arsenide,epitaxial growth

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