Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD

Chihjen Hsiao,Chunkuan Liu,Sahoang Huynh,Thienhuu Ha Minh, Hungwei Yu,Hongquan Nguyen,Jershen Maa,Shooujinn Chang,Edward Yi Chang

Semiconductor Electronics（2014）

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摘要

The epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90° interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.

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关键词

iii-v semiconductors,mocvd,dislocations,gallium arsenide,gallium compounds,semiconductor epitaxial layers,semiconductor growth,surface morphology,surface roughness,vapour phase epitaxial growth,gaas,gasb-gaas,v-iii ratio,epitaxial growth,gallium antimonide thin film,gallium antimonide-gallium arsenide heterostructure,gallium arsenide-gallium antimonide interface,high-lattice mismatched gaas substrates,hill-and-valley structure,metalorganic chemical vapor deposition,misfit dislocation arrays,smooth surface morphology,gasb,heterostructure,interfacial misfit dislocation (imf),metalorganic chemical vapor deposition (mocvd)

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