New Framework for the random charging/discharging of oxide traps in HfO2 gate dielectric: ab-initio simulation and experimental evidence

Electron Devices Meeting, 2014, Pages 21.4.1-21.4.4.

Cited by: 0|Bibtex|Views8|Links
EI WOS
Keywords:
ab initio calculationselectron trapshafnium compoundshigh-k dielectric thin filmsnegative bias temperature instabilityMore(15+)

Abstract:

A new framework for first-principle simulation on random charging/discharging of individual oxide traps is established and adopted for detailed studies on HfO2 high-k gate dielectrics for the first time. The proposed framework provides an effective solution to the challenges in conventional multi-phonon simulation methodology, and success...More

Code:

Data:

Your rating :
0

 

Tags
Comments