Threshold voltage tuning by metal gate work function modulation for 10 nm CMOS integration and beyond

Norihiro Yoshida,Keping Han,Pengfu Hsu,Mark A Beach,Xinliang Lu,Raymond Hung, Dong Mao,Hao Chen,Wei Tang,Yu Lei,Jing Zhou,Abdollah Noori,Miao Jin,Kun Xu,A V Phatak,Shiyu Sun, Shoaib Hassan, Srikant Gandikota,Chorngping Chang,Adam Brand

VLSI Technology, Systems and Application（2014）

引用 10|浏览34

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摘要

This paper describes a novel scheme of metal gate integration to achieve precise threshold voltage (VTH) control and multiple VTH, by using metal composition and ion implantation (I/I) into work function metal (WFM). Moreover, WFM full fill is demonstrated with in situ barrier metal to satisfy the conductance requirement of sub-10 nm node gate.

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关键词

cmos integrated circuits,circuit tuning,ion implantation,work function,cmos integration,vth control,wfm,in situ barrier metal,metal composition,metal gate integration,metal gate work function modulation,multiple vth,precise threshold voltage control,size 10 nm,threshold voltage tuning,nitrogen,tuning,logic gates,tin

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