Printed Low-Voltage Fuse Memory on Paper

Jaakko Leppaniemi,Tomi Mattila,Kim Eiroma,Takayuki Miyakawa, Kentaro Murata,Ari Alastalo

Electron Device Letters, IEEE （2014）

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摘要

A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a μm2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA/μm2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories.

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关键词

current density,electromigration,ink jet printing,nanoparticles,paper,silver,statistical distributions,write-once storage,ag,worm memory,antifuse-type worm memories,bit writing process,low-current writability,low-voltage writability,memory retention time,memory writing process,paper substrate,printed batteries,printed low-voltage fuse memory,silver electromigration,silver nanoparticle conductor,statistical distribution,super-fine inkjet technology,write-once-read-many memory,printed memory,write-once memory,ink,conductors,fuses,writing

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