BMD impact on silicon fin defect at TSV bottom

Dingyou Zhang,Sara Thangaraju,David C Smith,Himani S Kamineni, Christian Klewer,Mark Scholefield,Ming Lei, Anil Vikram,V Lim,Wonwoo Kim,Ramakanth Alapati

Electronics Letters （2014）

引用 2|浏览17

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摘要

A new type of through-silicon via (TSV) defect, silicon fin defect, which was found after the TSV deep-reactive-ion-etching process at the TSV bottom is reported. These defects are considered killer TSV defects that may cause process or mechanical failures and have to be eliminated. A scanning electron microscope automatic process inspection approach, which is non-destructive and proven to be effective, has been established to image the fin defects at the bottom of the trench. A possible root cause of this defect is also explored. Both simulation and benchmarking test results indicate that bulk micro defects (BMDs) in the silicon substrate could serve as a micro-mask during etching and result in silicon fin defects.

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关键词

elemental semiconductors,inspection,scanning electron microscopy,silicon,sputter etching,three-dimensional integrated circuits,api approach,bmd impact,drie process,sem,si,tsv bottom,tsv deep-reactive-ion-etching process,tsv defect,automatic process inspection approach,benchmarking test,bulk microdefects,etching,mechanical failures,micromask,nondestructive testing,scanning electron microscope,silicon fin defect,silicon fin defects,through-silicon via,through silicon via

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