1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding

Jia Woei Wu,Sauvik Chowdhury,Collin Hitchcock,James J Q Lu,T Paul Chow,Woochan Kim,Khai Ngo

Power Semiconductor Devices & IC's（2014）

引用 25|浏览2

暂无评分

摘要

A 1200V, 25A bi-directional silicon DMOS-IGBT has been successfully fabricated using a hydrophobic bonding process at low temperature (400°C). With the aid of a glass carrier approach, a flat and clean bonding surface for producing an electrically stable and transparent junction was achieved. The static and dynamic performance with and without back-side gate control are presented and compared.

查看译文

关键词

hydrophobicity,insulated gate bipolar transistors,power transistors,wafer bonding,back side gate control,bidirectional dmos igbt,clean bonding surface,current 25 a,dynamic performance,electrically stable junction,flat bonding surface,fusion wafer bonding,glass carrier,hydrophobic bonding process,static performance,temperature 400 c,transparent junction,voltage 1200 v,logic gates,switches,silicon

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要