InP nanowire lasers epitaxially grown on (001) silicon ‘V-groove’ templates

B Tian,Zhechao Wang,M Pantouvaki,Weiming Guo, Joris Van Campenhout,Merckling Clement,Dries Van Thourhout

Indium Phosphide and Related Materials（2014）

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摘要

We demonstrate an ultra-low threshold nanowire laser monolithically integrated on a (001) silicon substrate. By using a V-groove template we were able to reduce the laser threshold by one order of magnitude (0.19pJ per pulse) compared with our earlier devices and dramatically increased the yield throughout the wafer.

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关键词

iii-v semiconductors,indium compounds,integrated optics,nanophotonics,nanowires,semiconductor lasers,(001) silicon v-groove templates,(001) silicon substrate,inp,si,laser threshold,monolithic integration,ultralow threshold nanowire laser,silicon,epitaxial growth

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