Fabrication of a MTJ-based multilevel resistor towards process-variaton-resilient logic LSI
NEWCAS（2014）
摘要
A nonvolatile multilevel resistor cell based on magnetic tunnel junction (MTJ) device is proposed for process-variation-resilient logic LSIs. The proposed cell is designed by the series-parallel connection of several “unit” MTJ devices, and its resistance value can be changed by using only one write path. Its basic behavior is simulated by using a SPICE simulator with built-in MTJ device model. The measurement result of a fabricated TEG circuit is also demonstrated.
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关键词
integrated circuit modelling,integrated logic circuits,large scale integration,magnetic tunnelling,mtj-based multilevel resistor fabrication,spice simulator,built-in mtj device model,fabricated teg circuit,magnetic tunnel junction device,nonvolatile multilevel resistor cell,process-variaton-resilient logic lsi,resistance value,series-parallel connection,write path,beyond cmos,logic circuit,post-process variation compensation,very large scale integration,computer architecture,resistance,resistors,transistors
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